2SB1114 features world standard miniature package. high dc current gain hfe=135 to 600. low v ce(sat) :v ce(sat) =-0.3v at 1.5a absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo -20 v collector to emitter voltage v ceo -20 v emitter to base voltage v ebo -6 v collector current i c -2 a collector current (pulse) * i c -3 a total power dissipation p t 2w junction temperature t j 150 storage temperature range t stg -55to+150 * pulsed: pw 10 ms, duty cycle 50% electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =16v,i e = 0 -100 na emitter cutoff current i ebo v eb =-6.0v,i c = 0 -100 na v ce =-2.0v,i c = -100 ma 135 350 600 v ce =-2.0v,i c = -2.0ma 40 collector saturation voltage * v ce(sat) i c = -1.5a, i b = -50 ma -0.3 -0.5 v base saturation voltage * v be(sat) i c = -1.5a, i b = -50 ma -1.05 -1.2 v base-emitter voltage * v be v ce =-6.0v,i c = -100 ma -0.65 -0.68 -0.75 v gain bandwidth product f t v ce =-10v,i e = 50 ma 180 mhz output capacitance c ob v cb =-10v,i e =0,f=1.0mhz 60 pf * pulsed: pw 350 s, duty cycle 2% dc current gain * h fe h fe classification marking zm zl zk h fe 135 270 200 400 300 600 sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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